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Vishay SI3446ADV-T1-GE3
MOSFET N-CH 20V 6A 6TSOP
Manufacturer # :SI3446ADV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3446ADV-T1-GE3-DS
Datasheet :
SI3446ADV-T1-GE3 Datasheet
SI3446ADV-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 6A 6TSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 180+ | $ 0.2547 | $ 45.85 |
| 435+ | $ 0.2088 | $ 90.83 |
| 670+ | $ 0.2025 | $ 135.68 |
| 920+ | $ 0.1962 | $ 180.5 |
| 1185+ | $ 0.1899 | $ 225.03 |
In Stock: 7320
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2547
Total :$ 0.25
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SI3446ADV-T1-GE3 information
Vishay SI3446ADV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):2W (Ta), 3.2W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Tc)
- Rds On ( Max) @ Id, Vgs:37mOhm @ 5.8A, 4.5V
- Vgs(th) ( Max) @ Id:1.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:640 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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