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Vishay SI3443BDV-T1-GE3
MOSFET P-CH 20V 3.6A 6TSOP
Manufacturer # :SI3443BDV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3443BDV-T1-GE3-DS
Datasheet :
SI3443BDV-T1-GE3 Datasheet
SI3443BDV-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 3.6A 6TSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0496 | $ 10.5 |
| 3000+ | $ 0.5831 | $ 1749.3 |
| 6000+ | $ 0.5644 | $ 3386.4 |
| 12000+ | $ 0.5457 | $ 6548.4 |
| 18000+ | $ 0.5236 | $ 9424.8 |
In Stock: 1919
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0496
Total :$ 1.05
Delivery :
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SI3443BDV-T1-GE3 information
Vishay SI3443BDV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):1.1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:3.6A (Ta)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 4.7A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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