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Vishay SI3433CDV-T1-BE3
P-CHANNEL 20-V (D-S) MOSFET
Manufacturer # :SI3433CDV-T1-BE3
Manufacturer :Vishay
Dasenic # :SI3433CDV-T1-BE3-DS
Datasheet :
SI3433CDV-T1-BE3 Datasheet
SI3433CDV-T1-BE3 DatasheetCustomer # :
Description : P-CHANNEL 20-V (D-S) MOSFET
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| Quantity | Unit Price | Total |
| 10+ | $ 0.2655 | $ 2.66 |
| 3000+ | $ 0.1475 | $ 442.5 |
| 6000+ | $ 0.1400 | $ 840 |
| 9000+ | $ 0.1300 | $ 1170 |
| 30000+ | $ 0.1270 | $ 3810 |
In Stock: 37728
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2655
Total :$ 0.27
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SI3433CDV-T1-BE3 information
Vishay SI3433CDV-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):1.6W (Ta), 3.3W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:5.2A (Ta), 6A (Tc)
- Rds On ( Max) @ Id, Vgs:38mOhm @ 5.2A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:45 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1300 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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