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Vishay SI3424DV-T1-GE3
Manufacturer # :SI3424DV-T1-GE3
Manufacturer :Vishay
Dasenic # :SI3424DV-T1-GE3-DS
Datasheet : SI3424DV-T1-GE3 Datasheet
Customer # :
Description : MOSFET N-CH 30V 5A 6TSOP
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In Stock: 43802
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0938
Total :$ 0.09
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SI3424DV-T1-GE3 information
Vishay SI3424DV-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-TSOP
- Power Dissipation ( Max):1.14W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:5A (Ta)
- Rds On ( Max) @ Id, Vgs:28mOhm @ 6.7A, 10V
- Vgs(th) ( Max) @ Id:800mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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