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Vishay SI2366DS-T1-BE3
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer # :SI2366DS-T1-BE3
Manufacturer :Vishay
Dasenic # :SI2366DS-T1-BE3-DS
Datasheet :
SI2366DS-T1-BE3 Datasheet
SI2366DS-T1-BE3 DatasheetCustomer # :
Description : N-CHANNEL 30-V (D-S) MOSFET
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| Quantity | Unit Price | Total |
| 10+ | $ 0.2414 | $ 2.41 |
| 3000+ | $ 0.1341 | $ 402.3 |
| 6000+ | $ 0.1273 | $ 763.8 |
| 9000+ | $ 0.1182 | $ 1063.8 |
| 30000+ | $ 0.1154 | $ 3462 |
In Stock: 43922
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2414
Total :$ 0.24
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SI2366DS-T1-BE3 information
Vishay SI2366DS-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):1.25W (Ta), 2.1W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.5A (Ta), 5.8A (Tc)
- Rds On ( Max) @ Id, Vgs:36mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:335 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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