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Vishay SI2337DS-T1-BE3
P-CHANNEL 80-V (D-S) MOSFET
Manufacturer # :SI2337DS-T1-BE3
Manufacturer :Vishay
Dasenic # :SI2337DS-T1-BE3-DS
Datasheet :
SI2337DS-T1-BE3 Datasheet
SI2337DS-T1-BE3 DatasheetCustomer # :
Description : P-CHANNEL 80-V (D-S) MOSFET
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| Quantity | Unit Price | Total |
| 10+ | $ 0.6075 | $ 6.08 |
| 3000+ | $ 0.3375 | $ 1012.5 |
| 6000+ | $ 0.3285 | $ 1971 |
| 9000+ | $ 0.3240 | $ 2916 |
| 12000+ | $ 0.3195 | $ 3834 |
In Stock: 29139
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6075
Total :$ 0.61
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SI2337DS-T1-BE3 information
Vishay SI2337DS-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):760mW (Ta), 2.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:1.2A (Ta), 2.2A (Tc)
- Rds On ( Max) @ Id, Vgs:270mOhm @ 1.2A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:500 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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