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Vishay SI2333DS-T1-GE3
MOSFET P-CH 12V 4.1A SOT23-3
Manufacturer # :SI2333DS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2333DS-T1-GE3-DS
Datasheet :
SI2333DS-T1-GE3 Datasheet
SI2333DS-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 12V 4.1A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.1053 | $ 0.11 |
| 25+ | $ 0.1008 | $ 2.52 |
| 100+ | $ 0.0963 | $ 9.63 |
| 500+ | $ 0.0891 | $ 44.55 |
| 1000+ | $ 0.0792 | $ 79.2 |
In Stock: 43219
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1053
Total :$ 0.11
Delivery :
Payment :
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SI2333DS-T1-GE3 information
Vishay SI2333DS-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):750mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:4.1A (Ta)
- Rds On ( Max) @ Id, Vgs:32mOhm @ 5.3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1100 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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