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Vishay SI2331DS-T1-E3
Manufacturer # :SI2331DS-T1-E3
Manufacturer :Vishay
Dasenic # :SI2331DS-T1-E3-DS
Datasheet : SI2331DS-T1-E3 Datasheet
Customer # :
Description : MOSFET P-CH 12V 3.2A SOT23-3
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In Stock: 2394
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9844
Total :$ 0.98
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SI2331DS-T1-E3 information
Vishay SI2331DS-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):710mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:3.2A (Ta)
- Rds On ( Max) @ Id, Vgs:48mOhm @ 3.6A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:780 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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