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Vishay SI2323DDS-T1-BE3
P-CHANNEL 20-V (D-S) MOSFET
Manufacturer # :SI2323DDS-T1-BE3
Manufacturer :Vishay
Dasenic # :SI2323DDS-T1-BE3-DS
Datasheet :
SI2323DDS-T1-BE3 Datasheet
SI2323DDS-T1-BE3 DatasheetCustomer # :
Description : P-CHANNEL 20-V (D-S) MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3080 | $ 3.08 |
| 3000+ | $ 0.1711 | $ 513.3 |
| 6000+ | $ 0.1624 | $ 974.4 |
| 9000+ | $ 0.1508 | $ 1357.2 |
| 30000+ | $ 0.1473 | $ 4419 |
In Stock: 7609
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.308
Total :$ 0.31
Delivery :
Payment :
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SI2323DDS-T1-BE3 information
Vishay SI2323DDS-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):960mW (Ta), 1.7W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4.1A (Ta), 5.3A (Tc)
- Rds On ( Max) @ Id, Vgs:39mOhm @ 4.1A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:36 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1160 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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