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Vishay SI2316DS-T1-GE3
MOSFET N-CH 30V 2.9A SOT23-3
Manufacturer # :SI2316DS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2316DS-T1-GE3-DS
Datasheet :
SI2316DS-T1-GE3 Datasheet
SI2316DS-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 2.9A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1113 | $ 11.11 |
| 3000+ | $ 0.6174 | $ 1852.2 |
| 6000+ | $ 0.5976 | $ 3585.6 |
| 12000+ | $ 0.5778 | $ 6933.6 |
| 18000+ | $ 0.5544 | $ 9979.2 |
In Stock: 1978
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1113
Total :$ 1.11
Delivery :
Payment :
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SI2316DS-T1-GE3 information
Vishay SI2316DS-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:2.9A (Ta)
- Rds On ( Max) @ Id, Vgs:50mOhm @ 3.4A, 10V
- Vgs(th) ( Max) @ Id:800mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:215 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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