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Vishay SI2311DS-T1-GE3
MOSFET P-CH 8V 3A SOT23-3
Manufacturer # :SI2311DS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2311DS-T1-GE3-DS
Datasheet :
SI2311DS-T1-GE3 Datasheet
SI2311DS-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 8V 3A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1399 | $ 11.4 |
| 3000+ | $ 0.6333 | $ 1899.9 |
| 6000+ | $ 0.5999 | $ 3599.4 |
| 9000+ | $ 0.5555 | $ 4999.5 |
| 30000+ | $ 0.5466 | $ 16398 |
In Stock: 2577
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1399
Total :$ 1.14
Delivery :
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SI2311DS-T1-GE3 information
Vishay SI2311DS-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):710mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:3A (Ta)
- Rds On ( Max) @ Id, Vgs:45mOhm @ 3.5A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:970 pF @ 4 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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