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Vishay SI2311DS-T1-E3

MOSFET P-CH 8V 3A SOT23-3
part number has RoHS
Manufacturer # :SI2311DS-T1-E3
Manufacturer :Vishay
Dasenic # :SI2311DS-T1-E3-DS
Customer # :
Description : MOSFET P-CH 8V 3A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 1.0903$ 10.9
3000+$ 0.6057$ 1817.1
6000+$ 0.5675$ 3405
In Stock: 1260
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0903
Total :$ 1.09
Delivery :
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SI2311DS-T1-E3 information

  • Vishay SI2311DS-T1-E3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Power Dissipation ( Max):710mW (Ta)
  • F E T Type:P-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):8 V
  • Current - Continuous Drain ( Id) @ 25° C:3A (Ta)
  • Rds On ( Max) @ Id, Vgs:45mOhm @ 3.5A, 4.5V
  • Vgs(th) ( Max) @ Id:800mV @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:970 pF @ 4 V
  • Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
  • Vgs ( Max):±8V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • US ECCN:Provided as per user requirements
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

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