Images are for reference only.
1 : $0.3127
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay SI2307BDS-T1-GE3
Manufacturer # :SI2307BDS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2307BDS-T1-GE3-DS
Datasheet : SI2307BDS-T1-GE3 Datasheet
Customer # :
Description : MOSFET P-CH 30V 2.5A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3127
Total :$ 0.31
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
SI2307BDS-T1-GE3 information
Vishay SI2307BDS-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):750mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:2.5A (Ta)
- Rds On ( Max) @ Id, Vgs:78mOhm @ 3.2A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:380 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.