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Vishay SI2302DDS-T1-BE3
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer # :SI2302DDS-T1-BE3
Manufacturer :Vishay
Dasenic # :SI2302DDS-T1-BE3-DS
Datasheet :
SI2302DDS-T1-BE3 Datasheet
SI2302DDS-T1-BE3 DatasheetCustomer # :
Description : N-CHANNEL 20-V (D-S) MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3780 | $ 0.38 |
| 10+ | $ 0.2691 | $ 2.69 |
| 100+ | $ 0.1355 | $ 13.55 |
| 500+ | $ 0.1201 | $ 60.05 |
| 1000+ | $ 0.0934 | $ 93.4 |
In Stock: 15736
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.378
Total :$ 0.38
Delivery :
Payment :
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SI2302DDS-T1-BE3 information
Vishay SI2302DDS-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):710mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.6A (Ta)
- Rds On ( Max) @ Id, Vgs:57mOhm @ 3.6A, 4.5V
- Vgs(th) ( Max) @ Id:850mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:5.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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