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Vishay SI2302ADS-T1
MOSFET N-CH 20V 2.1A SOT23-3
Manufacturer # :SI2302ADS-T1
Manufacturer :Vishay
Dasenic # :SI2302ADS-T1-DS
Datasheet :
SI2302ADS-T1 Datasheet
SI2302ADS-T1 DatasheetCustomer # :
Description : MOSFET N-CH 20V 2.1A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3420 | $ 0.34 |
| 100+ | $ 0.2610 | $ 26.1 |
| 1000+ | $ 0.2250 | $ 225 |
In Stock: 1568
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.342
Total :$ 0.34
Delivery :
Payment :
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SI2302ADS-T1 information
Vishay SI2302ADS-T1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.1A (Ta)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 3.6A, 4.5V
- Vgs(th) ( Max) @ Id:1.2V @ 50µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:300 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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