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Vishay SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3
Manufacturer # :SI2301BDS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2301BDS-T1-GE3-DS
Datasheet :
SI2301BDS-T1-GE3 Datasheet
SI2301BDS-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.2A SOT23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3510 | $ 0.35 |
| 10+ | $ 0.3051 | $ 3.05 |
| 100+ | $ 0.2151 | $ 21.51 |
| 500+ | $ 0.1782 | $ 89.1 |
| 1000+ | $ 0.1503 | $ 150.3 |
In Stock: 23183
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.351
Total :$ 0.35
Delivery :
Payment :
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SI2301BDS-T1-GE3 information
Vishay SI2301BDS-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.2A (Ta)
- Rds On ( Max) @ Id, Vgs:100mOhm @ 2.8A, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:375 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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