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Vishay SI2301BDS-T1-BE3
P-CHANNEL 2.5-V (G-S) MOSFET
Manufacturer # :SI2301BDS-T1-BE3
Manufacturer :Vishay
Dasenic # :SI2301BDS-T1-BE3-DS
Datasheet :
SI2301BDS-T1-BE3 Datasheet
SI2301BDS-T1-BE3 DatasheetCustomer # :
Description : P-CHANNEL 2.5-V (G-S) MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.1951 | $ 1.95 |
| 3000+ | $ 0.1084 | $ 325.2 |
| 6000+ | $ 0.1039 | $ 623.4 |
| 9000+ | $ 0.0935 | $ 841.5 |
| 30000+ | $ 0.0921 | $ 2763 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1951
Total :$ 0.20
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SI2301BDS-T1-BE3 information
Vishay SI2301BDS-T1-BE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.2A (Ta)
- Rds On ( Max) @ Id, Vgs:100mOhm @ 2.8A, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:375 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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