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Vishay SI1469DH-T1-GE3
MOSFET P-CH 20V 2.7A SC70-6
Manufacturer # :SI1469DH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1469DH-T1-GE3-DS
Datasheet :
SI1469DH-T1-GE3 Datasheet
SI1469DH-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.7A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3638 | $ 3.64 |
| 3000+ | $ 0.2021 | $ 606.3 |
| 6000+ | $ 0.1878 | $ 1126.8 |
| 9000+ | $ 0.2021 | $ 1818.9 |
| 15000+ | $ 0.1800 | $ 2700 |
In Stock: 17064
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3638
Total :$ 0.36
Delivery :
Payment :
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SI1469DH-T1-GE3 information
Vishay SI1469DH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):1.5W (Ta), 2.78W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.7A (Tc)
- Rds On ( Max) @ Id, Vgs:80mOhm @ 2A, 10V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:470 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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