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Vishay SI1467DH-T1-E3
MOSFET P-CH 20V 2.7A SC70-6
Manufacturer # :SI1467DH-T1-E3
Manufacturer :Vishay
Dasenic # :SI1467DH-T1-E3-DS
Datasheet :
SI1467DH-T1-E3 Datasheet
SI1467DH-T1-E3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.7A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3964 | $ 3.96 |
| 3000+ | $ 0.2202 | $ 660.6 |
| 6000+ | $ 0.2086 | $ 1251.6 |
| 9000+ | $ 0.1932 | $ 1738.8 |
| 30000+ | $ 0.1913 | $ 5739 |
In Stock: 9742
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3964
Total :$ 0.40
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SI1467DH-T1-E3 information
Vishay SI1467DH-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):1.5W (Ta), 2.78W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.7A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 2A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:561 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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