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Vishay SI1441EDH-T1-GE3
MOSFET P-CH 20V 4A SOT-363
Manufacturer # :SI1441EDH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1441EDH-T1-GE3-DS
Datasheet :
SI1441EDH-T1-GE3 Datasheet
SI1441EDH-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 4A SOT-363
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2495 | $ 2.5 |
| 3000+ | $ 0.1386 | $ 415.8 |
| 6000+ | $ 0.1359 | $ 815.4 |
| 9000+ | $ 0.1341 | $ 1206.9 |
| 12000+ | $ 0.1332 | $ 1598.4 |
In Stock: 15894
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2495
Total :$ 0.25
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SI1441EDH-T1-GE3 information
Vishay SI1441EDH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):2.8W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
- Rds On ( Max) @ Id, Vgs:41mOhm @ 5A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:33 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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