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Vishay SI1428EDH-T1-GE3
MOSFET N-CHANNEL 30V 4A SC70-6
Manufacturer # :SI1428EDH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1428EDH-T1-GE3-DS
Datasheet :
SI1428EDH-T1-GE3 Datasheet
SI1428EDH-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CHANNEL 30V 4A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 3+ | $ 0.5200 | $ 1.56 |
| 25+ | $ 0.4220 | $ 10.55 |
| 100+ | $ 0.3720 | $ 37.2 |
| 500+ | $ 0.3360 | $ 168 |
| 3000+ | $ 0.3120 | $ 936 |
In Stock: 2292
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.52
Total :$ 0.52
Delivery :
Payment :
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SI1428EDH-T1-GE3 information
Vishay SI1428EDH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):2.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
- Rds On ( Max) @ Id, Vgs:45mOhm @ 3.7A, 10V
- Vgs(th) ( Max) @ Id:1.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±12V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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