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Vishay SI1427EDH-T1-GE3
MOSFET P-CH 20V 2A SC70-6
Manufacturer # :SI1427EDH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1427EDH-T1-GE3-DS
Datasheet :
SI1427EDH-T1-GE3 Datasheet
SI1427EDH-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 2A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0747 | $ 0.07 |
| 10+ | $ 0.0747 | $ 0.75 |
| 25+ | $ 0.0747 | $ 1.87 |
| 50+ | $ 0.0747 | $ 3.74 |
| 100+ | $ 0.0747 | $ 7.47 |
In Stock: 32361
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0747
Total :$ 0.07
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SI1427EDH-T1-GE3 information
Vishay SI1427EDH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):1.56W (Ta), 2.8W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Tc)
- Rds On ( Max) @ Id, Vgs:64mOhm @ 3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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