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Vishay SI1422DH-T1-GE3
Manufacturer # :SI1422DH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1422DH-T1-GE3-DS
Datasheet : SI1422DH-T1-GE3 Datasheet
Customer # :
Description : MOSFET N-CH 12V 4A SC70-6
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In Stock: 2222
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.88
Total :$ 0.88
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Payment :
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SI1422DH-T1-GE3 information
Vishay SI1422DH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):1.56W (Ta), 2.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
- Rds On ( Max) @ Id, Vgs:26mOhm @ 5.1A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:725 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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