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Vishay SI1405DL-T1-GE3
MOSFET P-CH 8V 1.6A SC70-6
Manufacturer # :SI1405DL-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1405DL-T1-GE3-DS
Datasheet :
SI1405DL-T1-GE3 Datasheet
SI1405DL-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 8V 1.6A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7340 | $ 7.34 |
| 3000+ | $ 0.4893 | $ 1467.9 |
| 6000+ | $ 0.4636 | $ 2781.6 |
| 9000+ | $ 0.4292 | $ 3862.8 |
| 30000+ | $ 0.4224 | $ 12672 |
In Stock: 82
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.734
Total :$ 0.73
Delivery :
Payment :
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SI1405DL-T1-GE3 information
Vishay SI1405DL-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):568mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:1.6A (Ta)
- Rds On ( Max) @ Id, Vgs:125mOhm @ 1.8A, 4.5V
- Vgs(th) ( Max) @ Id:450mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:7 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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