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Vishay SI1405BDH-T1-GE3
MOSFET P-CH 8V 1.6A SC70-6
Manufacturer # :SI1405BDH-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1405BDH-T1-GE3-DS
Datasheet :
SI1405BDH-T1-GE3 Datasheet
SI1405BDH-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 8V 1.6A SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.2000 | $ 1.2 |
In Stock: 2080
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2
Total :$ 1.20
Delivery :
Payment :
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SI1405BDH-T1-GE3 information
Vishay SI1405BDH-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-70-6
- Power Dissipation ( Max):1.47W (Ta), 2.27W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:1.6A (Tc)
- Rds On ( Max) @ Id, Vgs:112mOhm @ 2.8A, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:5.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:305 pF @ 4 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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