Images are for reference only.
1 : $0.2111
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay Intertechnology SI1070X-T1-GE3
MOSFET N-CH 30V 1.2A SC89-6
Manufacturer # :SI1070X-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :BC0C9F-DS
Datasheet :
SI1070X-T1-GE3 Datasheet
SI1070X-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 30V 1.2A SC89-6 SOT-563, SOT-666
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.211100 | $ 2.11 |
| 3000+ | $ 0.117300 | $ 351.9 |
| 6000+ | $ 0.115300 | $ 691.8 |
| 12000+ | $ 0.113400 | $ 1360.8 |
| 18000+ | $ 0.111400 | $ 2005.2 |
In Stock: 9000
MOQ :1 PCS
Packaging :SOT-563, SOT-666
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.2111
Total :$ 0.21
Delivery : 
Payment :
Help you to save your cost and time.
Strict quality inspection and Reliable package for goods.
Fast Reliable delivery to save time.
Provide 365 days warranty after-sales service
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:SOT-563, SOT-666
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-89 (SOT-563F)
- Power Dissipation ( Max):236mW (Ta)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:1.2A (Ta)
- Rds On ( Max) @ Id, Vgs:99mOhm @ 1.2A, 4.5V
- Vgs(th) ( Max) @ Id:1.55V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8.3 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:385 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
