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Vishay SI1032X-T1-GE3
MOSFET N-CH 20V 200MA SC89-3
Manufacturer # :SI1032X-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1032X-T1-GE3-DS
Datasheet :
SI1032X-T1-GE3 Datasheet
SI1032X-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 200MA SC89-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2342 | $ 2.34 |
| 3000+ | $ 0.1301 | $ 390.3 |
| 6000+ | $ 0.1234 | $ 740.4 |
| 9000+ | $ 0.1146 | $ 1031.4 |
| 30000+ | $ 0.1120 | $ 3360 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2342
Total :$ 0.23
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SI1032X-T1-GE3 information
Vishay SI1032X-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-89, SOT-490
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-89-3
- Power Dissipation ( Max):300mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:200mA (Ta)
- Rds On ( Max) @ Id, Vgs:5Ohm @ 200mA, 4.5V
- Vgs(th) ( Max) @ Id:1.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:0.75 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±6V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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