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Vishay SI1013R-T1-GE3
MOSFET P-CH 20V 350MA SC75A
Manufacturer # :SI1013R-T1-GE3
Manufacturer :Vishay
Dasenic # :SI1013R-T1-GE3-DS
Datasheet :
SI1013R-T1-GE3 Datasheet
SI1013R-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 350MA SC75A
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3690 | $ 0.37 |
| 10+ | $ 0.3159 | $ 3.16 |
| 100+ | $ 0.2295 | $ 22.95 |
| 500+ | $ 0.1791 | $ 89.55 |
| 1000+ | $ 0.1458 | $ 145.8 |
In Stock: 48460
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.369
Total :$ 0.37
Delivery :
Payment :
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SI1013R-T1-GE3 information
Vishay SI1013R-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-75, SOT-416
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SC-75A
- Power Dissipation ( Max):150mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:350mA (Ta)
- Rds On ( Max) @ Id, Vgs:1.2Ohm @ 350mA, 4.5V
- Vgs(th) ( Max) @ Id:450mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:1.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±6V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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