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1 : $0.0384
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Vishay IRLD120PBF
MOSFET N-CH 100V 1.3A 4DIP
Manufacturer # :IRLD120PBF
Manufacturer :Vishay
Dasenic # :IRLD120PBF-DS
Datasheet :
IRLD120PBF Datasheet
IRLD120PBF DatasheetCustomer # :
Description : MOSFET N-CH 100V 1.3A 4DIP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0384 | $ 0.04 |
In Stock: 10200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0384
Total :$ 0.04
Delivery :
Payment :
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IRLD120PBF information
Vishay IRLD120PBF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:4-DIP (0.300", 7.62mm)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-HVMDIP
- Power Dissipation ( Max):1.3W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:1.3A (Ta)
- Rds On ( Max) @ Id, Vgs:270mOhm @ 780mA, 5V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:490 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 5V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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