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Vishay IRFBG30
MOSFET N-CH 1000V 3.1A TO220AB
Manufacturer # :IRFBG30
Manufacturer :Vishay
Dasenic # :IRFBG30-DS
Datasheet :
IRFBG30 Datasheet
IRFBG30 DatasheetCustomer # :
Description : MOSFET N-CH 1000V 3.1A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 55+ | $ 0.8910 | $ 49.01 |
| 125+ | $ 0.7308 | $ 91.35 |
| 195+ | $ 0.7083 | $ 138.12 |
| 265+ | $ 0.6849 | $ 181.5 |
| 340+ | $ 0.6624 | $ 225.22 |
In Stock: 25810
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.891
Total :$ 0.89
Delivery :
Payment :
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IRFBG30 information
Vishay IRFBG30 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1000 V
- Current - Continuous Drain ( Id) @ 25° C:3.1A (Tc)
- Rds On ( Max) @ Id, Vgs:5Ohm @ 1.9A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:80 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:980 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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