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Vishay IRFBE30LPBF
MOSFET N-CH 800V 4.1A I2PAK
Manufacturer # :IRFBE30LPBF
Manufacturer :Vishay
Dasenic # :IRFBE30LPBF-DS
Datasheet :
IRFBE30LPBF Datasheet
IRFBE30LPBF DatasheetCustomer # :
Description : MOSFET N-CH 800V 4.1A I2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4660 | $ 2.47 |
| 10+ | $ 1.6830 | $ 16.83 |
| 100+ | $ 1.4310 | $ 143.1 |
| 250+ | $ 1.3950 | $ 348.75 |
| 500+ | $ 1.2690 | $ 634.5 |
In Stock: 22174
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.466
Total :$ 2.47
Delivery :
Payment :
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IRFBE30LPBF information
Vishay IRFBE30LPBF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:I2PAK
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:4.1A (Tc)
- Rds On ( Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:78 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1300 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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