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Vishay IRF630STRL
MOSFET N-CH 200V 9A D2PAK
Manufacturer # :IRF630STRL
Manufacturer :Vishay
Dasenic # :IRF630STRL-DS
Datasheet :
IRF630STRL Datasheet
IRF630STRL DatasheetCustomer # :
Description : MOSFET N-CH 200V 9A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 5.0419 | $ 50.42 |
| 800+ | $ 4.2016 | $ 3361.28 |
| 1600+ | $ 3.5976 | $ 5756.16 |
| 2400+ | $ 3.3875 | $ 8130 |
| 5600+ | $ 3.2300 | $ 18088 |
In Stock: 1734
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.0419
Total :$ 5.04
Delivery :
Payment :
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IRF630STRL information
Vishay IRF630STRL technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):3W (Ta), 74W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Tc)
- Rds On ( Max) @ Id, Vgs:400mOhm @ 5.4A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:800 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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