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Vishay 2N7002K-T1-GE3
MOSFET N-CH 60V 300MA TO236
Manufacturer # :2N7002K-T1-GE3
Manufacturer :Vishay
Dasenic # :2N7002K-T1-GE3-DS
Datasheet :
2N7002K-T1-GE3 Datasheet
2N7002K-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 300MA TO236
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.0338 | $ 0.34 |
| 2000+ | $ 0.0225 | $ 45 |
| 4170+ | $ 0.0216 | $ 90.07 |
| 6525+ | $ 0.0207 | $ 135.07 |
| 9525+ | $ 0.0189 | $ 180.02 |
In Stock: 28552
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0338
Total :$ 0.03
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2N7002K-T1-GE3 information
Vishay 2N7002K-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):350mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:300mA (Ta)
- Rds On ( Max) @ Id, Vgs:2Ohm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:0.6 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:30 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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