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Vishay SI8851EDB-T2-E1
MOSFET P-CH 20V PWR MICRO FOOT
Manufacturer # :SI8851EDB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8851EDB-T2-E1-DS
Datasheet :
SI8851EDB-T2-E1 Datasheet
SI8851EDB-T2-E1 DatasheetCustomer # :
Description : MOSFET P-CH 20V PWR MICRO FOOT 30-XFBGA
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| Quantity | Unit Price | Total |
In Stock: 1073
MOQ :1 PCS
Packaging :30-XFBGA
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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Payment :
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SI8851EDB-T2-E1 information
Vishay SI8851EDB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:30-XFBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:Power Micro Foot® (2.4x2)
- Power Dissipation ( Max):660mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:7.7A (Ta)
- Rds On ( Max) @ Id, Vgs:8mOhm @ 7A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:180 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6900 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
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