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Vishay EGF1BHE3_A/H
DIODE GEN PURP 100V 1A DO214BA
Manufacturer # :EGF1BHE3_A/H
Manufacturer :Vishay
Dasenic # :EGF1BHE3_A/H-DS
Datasheet :
EGF1BHE3_A/H Datasheet
EGF1BHE3_A/H DatasheetCustomer # :
Description : DIODE GEN PURP 100V 1A DO214BA
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| Quantity | Unit Price | Total |
In Stock: 62
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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EGF1BHE3_A/H information
Vishay EGF1BHE3_A/H technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:DO-214BA
- Supplier Device Package:DO-214BA (GF1)
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):1A
- Voltage - Forward ( Vf) ( Max) @ If:1 V @ 1 A
- Current - Reverse Leakage @ Vr:1 µA @ 100 V
- Capacitance @ Vr, F:15pF @ 4V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):100 V
- Reverse Recovery Time (trr):50 ns
- Operating Temperature - Junction:-65°C ~ 175°C
- EU RoHS Status:ROHS3 Compliant
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
EGF1BHE3_A/H provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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