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UnitedSiC UJ3N120065K3S
1200V/65MOHM, SIC, N-ON JFET, G3
Manufacturer # :UJ3N120065K3S
Manufacturer :UnitedSiC
Dasenic # :UJ3N120065K3S-DS
Datasheet :
UJ3N120065K3S Datasheet
UJ3N120065K3S DatasheetCustomer # :
Description : 1200V/65MOHM, SIC, N-ON JFET, G3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 13.3020 | $ 13.3 |
| 25+ | $ 11.5650 | $ 289.13 |
| 100+ | $ 13.3020 | $ 1330.2 |
| 250+ | $ 9.1891 | $ 2297.28 |
| 500+ | $ 8.9100 | $ 4455 |
In Stock: 6969
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 13.302
Total :$ 13.30
Delivery :
Payment :
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UJ3N120065K3S information
UnitedSiC UJ3N120065K3S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - JFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Power - Max:254 W
- Supplier Device Package:TO-247-3
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):1200 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1008pF @ 100V
- Voltage - Breakdown ( V( B R) G S S):1200 V
- Current - Drain ( Idss) @ Vds ( Vgs=0):5 µA @ 1200 V
- Current Drain ( Id) - Max:34 A
- Voltage - Cutoff ( V G S off) @ Id:-
- Resistance - R D S( On):55 mOhms
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
UJ3N120065K3S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
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