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Toshiba Semiconductor and Storage XPN7R104NC,L1XHQ
MOSFET N-CH 40V 20A 8TSON
Manufacturer # :XPN7R104NC,L1XHQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :XPN7R104NC,L1XHQ-DS
Datasheet :
XPN7R104NC,L1XHQ Datasheet
XPN7R104NC,L1XHQ DatasheetCustomer # :
Description : MOSFET N-CH 40V 20A 8TSON
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7294 | $ 7.29 |
| 5000+ | $ 0.4052 | $ 2026 |
| 10000+ | $ 0.4050 | $ 4050 |
In Stock: 12000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7294
Total :$ 0.73
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XPN7R104NC,L1XHQ information
Toshiba Semiconductor and Storage XPN7R104NC,L1XHQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSON Advance-WF (3.1x3.1)
- Power Dissipation ( Max):840mW (Ta), 65W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:20A (Ta)
- Rds On ( Max) @ Id, Vgs:7.1mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1290 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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