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Toshiba Semiconductor and Storage TW070J120B,S1Q

Name: TW070J120B,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: DS-6163115
Price: 40.7952 USD
Availability: InStock
Rating: 4.8 (3 reviews)

SICFET N-CH 1200V 36A TO3P

Manufacturer # :TW070J120B,S1Q

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :TW070J120B,S1Q-DS

Datasheet :

TW070J120B,S1Q Datasheet

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Description : SICFET N-CH 1200V 36A TO3P

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Quantity	Unit Price	Total
25+	$ 40.7952	$ 1019.88

In Stock: 792

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 40.7952

Total :$ 40.80

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TW070J120B,S1Q information

Toshiba Semiconductor and Storage TW070J120B,S1Q technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-3P(N)
Power Dissipation ( Max):272W (Tc)
F E T Type:N-Channel
F E T Feature:Standard
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:36A (Tc)
Rds On ( Max) @ Id, Vgs:90mOhm @ 18A, 20V
Vgs(th) ( Max) @ Id:5.8V @ 20mA
Gate Charge ( Qg) ( Max) @ Vgs:67 nC @ 20 V
Input Capacitance ( Ciss) ( Max) @ Vds:1680 pF @ 800 V
Drive Voltage ( Max Rds On, Min Rds On):20V
Vgs ( Max):±25V, -10V
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage TW070J120B,S1Q
Datasheet:
TW070J120B,S1Q,

Toshiba Semiconductor and Storage TW070J120B,S1Q Environmental and export classification status description

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