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Toshiba Semiconductor and Storage TW070J120B,S1Q
Manufacturer # :TW070J120B,S1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TW070J120B,S1Q-DS
Datasheet : TW070J120B,S1Q Datasheet
Customer # :
Description : SICFET N-CH 1200V 36A TO3P
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In Stock: 792
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 40.7952
Total :$ 40.80
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TW070J120B,S1Q information
Toshiba Semiconductor and Storage TW070J120B,S1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-3P(N)
- Power Dissipation ( Max):272W (Tc)
- F E T Type:N-Channel
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:36A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 18A, 20V
- Vgs(th) ( Max) @ Id:5.8V @ 20mA
- Gate Charge ( Qg) ( Max) @ Vgs:67 nC @ 20 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1680 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):20V
- Vgs ( Max):±25V, -10V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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