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Toshiba Semiconductor and Storage TRS8E65C,S1Q
DIODE SCHOTTKY 650V 8A TO220-2L
Manufacturer # :TRS8E65C,S1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TRS8E65C,S1Q-DS
Datasheet :
TRS8E65C,S1Q Datasheet
TRS8E65C,S1Q DatasheetCustomer # :
Description : DIODE SCHOTTKY 650V 8A TO220-2L
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| Quantity | Unit Price | Total |
In Stock: 41
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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TRS8E65C,S1Q information
Toshiba Semiconductor and Storage TRS8E65C,S1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Through Hole
- Package / Case:TO-220-2
- Supplier Device Package:TO-220-2L
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):8A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 8 A
- Current - Reverse Leakage @ Vr:90 µA @ 650 V
- Capacitance @ Vr, F:44pF @ 650V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):650 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:175°C (Max)
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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