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Toshiba Semiconductor and Storage TRS6A65F,S1Q
PB-F DIODE TO-220-2L V=650 IF=6A
Manufacturer # :TRS6A65F,S1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TRS6A65F,S1Q-DS
Datasheet :
TRS6A65F,S1Q Datasheet
TRS6A65F,S1Q DatasheetCustomer # :
Description : PB-F DIODE TO-220-2L V=650 IF=6A
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.7630 | $ 2.76 |
| 10+ | $ 2.2320 | $ 22.32 |
| 25+ | $ 2.2140 | $ 55.35 |
| 50+ | $ 1.7280 | $ 86.4 |
| 100+ | $ 1.3770 | $ 137.7 |
In Stock: 1590
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.763
Total :$ 2.76
Delivery :
Payment :
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TRS6A65F,S1Q information
Toshiba Semiconductor and Storage TRS6A65F,S1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2 Full Pack
- Supplier Device Package:TO-220F-2L
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):6A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.6 V @ 6 A
- Current - Reverse Leakage @ Vr:30 µA @ 650 V
- Capacitance @ Vr, F:22pF @ 650V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):650 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:175°C (Max)
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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