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Toshiba Semiconductor and Storage TRS12E65F,S1Q
DODE SCHOTTKY 650V TO220
Manufacturer # :TRS12E65F,S1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TRS12E65F,S1Q-DS
Datasheet :
TRS12E65F,S1Q Datasheet
TRS12E65F,S1Q DatasheetCustomer # :
Description : DODE SCHOTTKY 650V TO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 98+ | $ 0.9209 | $ 90.25 |
| 100+ | $ 0.8366 | $ 83.66 |
| 250+ | $ 0.8290 | $ 207.25 |
| 500+ | $ 0.8286 | $ 414.3 |
In Stock: 4989
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9209
Total :$ 0.92
Delivery :
Payment :
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TRS12E65F,S1Q information
Toshiba Semiconductor and Storage TRS12E65F,S1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2
- Supplier Device Package:TO-220-2L
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):12A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 12 A
- Current - Reverse Leakage @ Vr:90 µA @ 650 V
- Capacitance @ Vr, F:65pF @ 650V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):650 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:175°C (Max)
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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