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Toshiba Semiconductor and Storage TPW4R008NH,L1Q
MOSFET N-CH 80V 116A 8DSOP
Manufacturer # :TPW4R008NH,L1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPW4R008NH,L1Q-DS
Datasheet :
TPW4R008NH,L1Q Datasheet
TPW4R008NH,L1Q DatasheetCustomer # :
Description : MOSFET N-CH 80V 116A 8DSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4300 | $ 2.43 |
| 10+ | $ 2.0250 | $ 20.25 |
| 100+ | $ 1.6110 | $ 161.1 |
| 500+ | $ 1.3680 | $ 684 |
| 1000+ | $ 1.1070 | $ 1107 |
In Stock: 9868
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.43
Total :$ 2.43
Delivery :
Payment :
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TPW4R008NH,L1Q information
Toshiba Semiconductor and Storage TPW4R008NH,L1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerWDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-DSOP Advance
- Power Dissipation ( Max):800mW (Ta), 142W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:116A (Tc)
- Rds On ( Max) @ Id, Vgs:4mOhm @ 50A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:59 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5300 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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