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Toshiba Semiconductor and Storage TPN5900CNH,L1Q

Name: TPN5900CNH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: DS-6162141
Price: 1.161 USD
Availability: InStock
Rating: 4.8 (3 reviews)

MOSFET N-CH 150V 9A 8TSON

Manufacturer # :TPN5900CNH,L1Q

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :TPN5900CNH,L1Q-DS

Datasheet :

TPN5900CNH,L1Q Datasheet

Customer # :

Customer #

Description : MOSFET N-CH 150V 9A 8TSON

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Quantity	Unit Price	Total
1+	$ 1.1610	$ 1.16
10+	$ 0.9540	$ 9.54
100+	$ 0.7371	$ 73.71
500+	$ 0.6246	$ 312.3
1000+	$ 0.4797	$ 479.7

In Stock: 6299

MOQ :1 PCS

Packaging :-

Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 1.161

Total :$ 1.16

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TPN5900CNH,L1Q information

Toshiba Semiconductor and Storage TPN5900CNH,L1Q technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.1x3.1)
Power Dissipation ( Max):700mW (Ta), 39W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):150 V
Current - Continuous Drain ( Id) @ 25° C:9A (Ta)
Rds On ( Max) @ Id, Vgs:59mOhm @ 4.5A, 10V
Vgs(th) ( Max) @ Id:4V @ 200µA
Gate Charge ( Qg) ( Max) @ Vgs:7 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:600 pF @ 75 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage TPN5900CNH,L1Q
Datasheet:
TPN5900CNH,L1Q,

Toshiba Semiconductor and Storage TPN5900CNH,L1Q Environmental and export classification status description

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