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Toshiba Semiconductor and Storage TPN30008NH,LQ

Name: TPN30008NH,LQ
Brand: Toshiba Semiconductor and Storage
SKU: DS-6163745
Price: 0.756 USD
Availability: InStock
Rating: 4.8 (3 reviews)

MOSFET N-CH 80V 9.6A 8TSON

Manufacturer # :TPN30008NH,LQ

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :TPN30008NH,LQ-DS

Datasheet :

TPN30008NH,LQ Datasheet

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Customer #

Description : MOSFET N-CH 80V 9.6A 8TSON

Pricing (USD) : *To apply for a price, please click the Send Target Price button

Quantity	Unit Price	Total
1+	$ 0.7560	$ 0.76
10+	$ 0.6165	$ 6.17
100+	$ 0.4797	$ 47.97
500+	$ 0.4068	$ 203.4
1000+	$ 0.3312	$ 331.2

In Stock: 17593

MOQ :1 PCS

Packaging :-

Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.756

Total :$ 0.76

Delivery :

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TPN30008NH,LQ information

Toshiba Semiconductor and Storage TPN30008NH,LQ technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Power Dissipation ( Max):700mW (Ta), 27W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):80 V
Current - Continuous Drain ( Id) @ 25° C:9.6A (Tc)
Rds On ( Max) @ Id, Vgs:30mOhm @ 4.8A, 10V
Vgs(th) ( Max) @ Id:4V @ 100µA
Gate Charge ( Qg) ( Max) @ Vgs:11 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:920 pF @ 40 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage TPN30008NH,LQ
Datasheet:
TPN30008NH,LQ,

Toshiba Semiconductor and Storage TPN30008NH,LQ Environmental and export classification status description

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