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Toshiba Semiconductor and Storage TPN2R503NC,L1Q
MOSFET N CH 30V 40A 8TSON-ADV
Manufacturer # :TPN2R503NC,L1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPN2R503NC,L1Q-DS
Datasheet :
TPN2R503NC,L1Q Datasheet
TPN2R503NC,L1Q DatasheetCustomer # :
Description : MOSFET N CH 30V 40A 8TSON-ADV
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.6000 | $ 2.6 |
In Stock: 1362
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.6
Total :$ 2.60
Delivery :
Payment :
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TPN2R503NC,L1Q information
Toshiba Semiconductor and Storage TPN2R503NC,L1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSON Advance (3.1x3.1)
- Power Dissipation ( Max):700mW (Ta), 35W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Ta)
- Rds On ( Max) @ Id, Vgs:2.5mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2230 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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