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Toshiba Semiconductor and Storage TPN2010FNH,L1Q
MOSFET N-CH 250V 5.6A 8TSON
Manufacturer # :TPN2010FNH,L1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPN2010FNH,L1Q-DS
Datasheet :
TPN2010FNH,L1Q Datasheet
TPN2010FNH,L1Q DatasheetCustomer # :
Description : MOSFET N-CH 250V 5.6A 8TSON
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.3050 | $ 1.31 |
| 10+ | $ 1.0890 | $ 10.89 |
| 100+ | $ 0.8613 | $ 86.13 |
| 250+ | $ 0.8253 | $ 206.33 |
| 500+ | $ 0.7290 | $ 364.5 |
In Stock: 16735
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.305
Total :$ 1.30
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TPN2010FNH,L1Q information
Toshiba Semiconductor and Storage TPN2010FNH,L1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSON Advance (3.1x3.1)
- Power Dissipation ( Max):700mW (Ta), 39W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):250 V
- Current - Continuous Drain ( Id) @ 25° C:5.6A (Ta)
- Rds On ( Max) @ Id, Vgs:198mOhm @ 2.8A, 10V
- Vgs(th) ( Max) @ Id:4V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:600 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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