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Toshiba Semiconductor and Storage TPN1600ANH,L1Q

Name: TPN1600ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: DS-6163558
Price: 0.648 USD
Availability: InStock
Rating: 4.8 (3 reviews)

MOSFET N CH 100V 17A 8TSON-ADV

Manufacturer # :TPN1600ANH,L1Q

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :TPN1600ANH,L1Q-DS

Datasheet :

TPN1600ANH,L1Q Datasheet

Customer # :

Customer #

Description : MOSFET N CH 100V 17A 8TSON-ADV

Pricing (USD) : *To apply for a price, please click the Send Target Price button

Quantity	Unit Price	Total
1+	$ 0.6480	$ 0.65
10+	$ 0.6336	$ 6.34
100+	$ 0.4626	$ 46.26
500+	$ 0.3843	$ 192.15
1000+	$ 0.3177	$ 317.7

In Stock: 32293

MOQ :1 PCS

Packaging :-

Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.648

Total :$ 0.65

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TPN1600ANH,L1Q information

Toshiba Semiconductor and Storage TPN1600ANH,L1Q technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.1x3.1)
Power Dissipation ( Max):700mW (Ta), 42W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):100 V
Current - Continuous Drain ( Id) @ 25° C:17A (Tc)
Rds On ( Max) @ Id, Vgs:16mOhm @ 8.5A, 10V
Vgs(th) ( Max) @ Id:4V @ 200µA
Gate Charge ( Qg) ( Max) @ Vgs:19 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:1600 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage TPN1600ANH,L1Q
Datasheet:
TPN1600ANH,L1Q,

Toshiba Semiconductor and Storage TPN1600ANH,L1Q Environmental and export classification status description

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