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Toshiba Semiconductor and Storage TPH3R003PL,LQ
MOSFET N-CH 30V 88A 8SOP
Manufacturer # :TPH3R003PL,LQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPH3R003PL,LQ-DS
Datasheet :
TPH3R003PL,LQ Datasheet
TPH3R003PL,LQ DatasheetCustomer # :
Description : MOSFET N-CH 30V 88A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9360 | $ 0.94 |
| 10+ | $ 0.6318 | $ 6.32 |
| 100+ | $ 0.9360 | $ 93.6 |
| 500+ | $ 0.3507 | $ 175.35 |
| 1000+ | $ 0.3221 | $ 322.1 |
In Stock: 8838
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.936
Total :$ 0.94
Delivery :
Payment :
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TPH3R003PL,LQ information
Toshiba Semiconductor and Storage TPH3R003PL,LQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP Advance (5x5)
- Power Dissipation ( Max):90W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:88A (Tc)
- Rds On ( Max) @ Id, Vgs:4.2mOhm @ 44A, 4.5V
- Vgs(th) ( Max) @ Id:2.1V @ 300µA
- Gate Charge ( Qg) ( Max) @ Vgs:50 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3825 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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