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Toshiba Semiconductor and Storage TPH2R306NH1,LQ

Name: TPH2R306NH1,LQ
Brand: Toshiba Semiconductor and Storage
SKU: DS-6160672
Price: 1.0247 USD
Availability: InStock
Rating: 4.8 (3 reviews)

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Manufacturer # :TPH2R306NH1,LQ

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :TPH2R306NH1,LQ-DS

Datasheet :

TPH2R306NH1,LQ Datasheet

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Customer #

Description : UMOS9 SOP-ADV(N) PD=170W F=1MHZ

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Quantity	Unit Price	Total
10+	$ 1.0247	$ 10.25
5000+	$ 0.5693	$ 2846.5

In Stock: 20900

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 1.0247

Total :$ 1.02

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TPH2R306NH1,LQ information

Toshiba Semiconductor and Storage TPH2R306NH1,LQ technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP Advance (5x5.75)
Power Dissipation ( Max):800mW (Ta), 170W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):60 V
Current - Continuous Drain ( Id) @ 25° C:136A (Tc)
Rds On ( Max) @ Id, Vgs:2.3mOhm @ 50A, 10V
Vgs(th) ( Max) @ Id:4V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs:72 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:6100 pF @ 30 V
Drive Voltage ( Max Rds On, Min Rds On):6.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage TPH2R306NH1,LQ
Datasheet:
TPH2R306NH1,LQ,

Toshiba Semiconductor and Storage TPH2R306NH1,LQ Environmental and export classification status description

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