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Toshiba Semiconductor and Storage TPH2R306NH1,LQ
Manufacturer # :TPH2R306NH1,LQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPH2R306NH1,LQ-DS
Datasheet : TPH2R306NH1,LQ Datasheet
Customer # :
Description : UMOS9 SOP-ADV(N) PD=170W F=1MHZ
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In Stock: 20900
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0247
Total :$ 1.02
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TPH2R306NH1,LQ information
Toshiba Semiconductor and Storage TPH2R306NH1,LQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP Advance (5x5.75)
- Power Dissipation ( Max):800mW (Ta), 170W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:136A (Tc)
- Rds On ( Max) @ Id, Vgs:2.3mOhm @ 50A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:72 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6100 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):6.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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