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Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ
MOSFET N-CH 40V 120A 8SOP
Manufacturer # :TPH1R104PB,L1XHQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPH1R104PB,L1XHQ-DS
Datasheet :
TPH1R104PB,L1XHQ Datasheet
TPH1R104PB,L1XHQ DatasheetCustomer # :
Description : MOSFET N-CH 40V 120A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.5030 | $ 1.5 |
| 10+ | $ 1.2420 | $ 12.42 |
| 100+ | $ 0.9900 | $ 99 |
| 250+ | $ 0.9180 | $ 229.5 |
| 500+ | $ 0.8370 | $ 418.5 |
In Stock: 7336
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.503
Total :$ 1.50
Delivery :
Payment :
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TPH1R104PB,L1XHQ information
Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.197", 5.00mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP Advance (5x5)
- Power Dissipation ( Max):960mW (Ta), 132W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:120A (Ta)
- Rds On ( Max) @ Id, Vgs:1.14mOhm @ 60A, 10V
- Vgs(th) ( Max) @ Id:3V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:55 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4560 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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